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Sunday, April 19, 2020 | History

4 edition of Advanced metallization for future ULSI found in the catalog.

Advanced metallization for future ULSI

symposium held April 8-11, 1996, San Francisco, California, U.S.A.

by

  • 312 Want to read
  • 40 Currently reading

Published by Materials Research Society in Pittsburgh, Pa .
Written in English

    Subjects:
  • Integrated circuits -- Ultra large scale integration -- Design and construction -- Congresses.,
  • Metallizing -- Congresses.,
  • Metallic films -- Congresses.,
  • Semiconductors -- Design and construction -- Congresses.

  • Edition Notes

    Statementeditors, K.N. Tu ... [et al.].
    SeriesMaterials Research Society symposium proceedings ;, v. 427, Materials Research Society symposia proceedings ;, v.427.
    ContributionsTu, K. N. 1937-, Materials Research Society. Meeting
    Classifications
    LC ClassificationsTK7874.76 .A32 1996
    The Physical Object
    Paginationxiii, 597 p. :
    Number of Pages597
    ID Numbers
    Open LibraryOL989227M
    ISBN 101558993304
    LC Control Number96027499

    BiCMOS technology now represents the optimal solution for a wide range of advanced applications. In this book, three of the field's leaders present in-depth coverage of the latest developments in CMOS/BiCMOS ULSI design—including thorough analyses of the fabrication technologies needed to realize low-voltage, low-power CMOS/BiCMOS structures. Reactions between Ti and WSi 2 have been studied between and °C. Reactions at the Ti–WSi 2 interface begin at °C, with the formation of TiSi. The TiSi is converted to TiSi 2 at °C. The formation temperatures for TiSi and TiSi 2 are higher than those observed for Ti on Si, presumably because the Si supply is limited by relatively slow diffusion of Si through WSi by: 6.


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